Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2004
• Main Authors: Belyaev, A.E., Foxon, C.T., Novikov, S.V., Makarovsky, O., Eaves, L., Kappers, M.J., Barnard, J.S., Humphreys, C.J., Danylyuk, S.V., Vitusevich, S.A., Naumov, A.V.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118170
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions / A.E. Belyaev, C.T. Foxon, S.V. Novikov, O. Makarovsky, L. Eaves, M.J. Kappers, J.S. Barnard, C.J. Humphreys, S.V. Danylyuk, S.A. Vitusevich, A.V. Naumov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 175-179. — Бібліогр.: 9 назв. — англ.

Present paper studies double barrier resonant tunnelling diodes (DB-RTD) based on GaN/AlGaN heterostructures, grown by plasma-assisted molecular beam epitaxy (PA-MBE). Tunnel (current-voltage, I–V) and capacitance (capacitance-voltage, C–V) spectroscopy measurements were performed at the temperature...