Харвестер відкритої науки НАН України

Effect of neutron irradiation and doping level on defect structure formation in gallium arsenide crystals

за авторством Seitmuratov, M.S., Klad'ko, V.P., Gudymenko, O.I., Datsenko, L.I., Prokopenko, I.V.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2002)

Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals

за авторством Klad'ko, V. P., Grigoriev, D.O., Datsenko, L.I., Machulin, V.F., Prokopenko, I.V.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (1999)

Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy

за авторством Kladko, V.P., Datsenko, L.I., Maksimenko, Z.V., Lytvyn, O.S., Prokopenko, I.V., Zytkiewicz, Z.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2000)

Investigation of superlattice structure parameters using quasi-forbidden reflections

за авторством Kladko, V.P., Datsenko, L.I., Korchovyi, A.A., Machulin, V.F., Lytvyn, P.M., Shalimov, A.V., Kuchuk, A.V., Kogutyuk, P.P.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2003)

Complex diffractometrical investigation of structural and compositional irregularities in GaAs:Si/GaAs films heavily doped with silicon

за авторством Datsenko, L.I., Klad’ko, V.P., Lytvyn, P.M., Domagala, J., Machulin, V.F., Prokopenko, I.V., Molodkin, V.B., Maksimenko, Z.V.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2001)

Structure perfection variations of Si crystals grown by Czochralski or floating zone methods after implantation of oxygen or neon atoms followed by annealing

за авторством Datsenko, L.I., Auleytner, J., Misiuk, A., Klad'ko, V.P., Machulin, V.F., Bak-Misiuk, J., Zymierska, D., Antonova, I.V., Melnyk, V.M., Popov, V.P., Czosnyka, T., Choinski, J.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (1999)