Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 1999
• Автори: Klad'ko, V. P., Grigoriev, D.O., Datsenko, L.I., Machulin, V.F., Prokopenko, I.V.
• Формат: Стаття
• Мова: English
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/119062
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals / V.P. Klad'ko, D.O. Grigoriev, L.I. Datsenko, V.F. Machulin, I.V. Prokopenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 157-162. — Бібліогр.: 19 назв. — англ.

The methods of numerical calculations based on the formulae of the X-ray dynamic scattering theory by real crystals and of the Takagi-Topin equations were used for investigation of the basic regularities of inherent to the Bragg diffraction in conditions of a strong and weak absorption. The mechanis...