Харвестер відкритої науки НАН України

An analytical accumulation mode SOI pMOSFET model for high-temperature analog applications

von Houk, Yu., Iniguez, B., Flandre, D., Nazarov, A.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2006)

Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation

von Houk, Y., Nazarov, A.N., Turchanikov, V.I., Lysenko, V.S., Andriaensen, S., Flandre, D.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2006)

Revision of interface coupling in ultra-thin body silicon-on-insulator MOSFETs

von Rudenko, T., Nazarov, A., Kilchytska, V., Flandre, D., Popov, V., Ilnitsky, M., Lysenko, V.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2013)