Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2006
• Hauptverfasser: Houk, Y., Nazarov, A.N., Turchanikov, V.I., Lysenko, V.S., Andriaensen, S., Flandre, D.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/121436
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation / Y. Houk, A.N. Nazarov, V.I. Turchanikov, V.S. Lysenko, S. Andriaensen, D. Flandre // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 69-74. — Бібліогр.: 7 назв. — англ.

An investigation of radiation effect on edgeless accumulation mode (AM) p-channel and fully-depleted enhancement mode (EM) n-channel MOSFETs, fabricated on UNIBOND silicon on insulatior wafers (SOI), is presented in the paper. Characterization of trapped charge in the gate and buried oxides of the...