Харвестер відкритої науки НАН України

The influence of ion implantation by phosphorous on structural changes in porous silicon

von Swiatek, Z., Lytvynchuk, I., Fodchuk, I.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2004)

Determination of surface parameters of solids by methods of X-ray total external reflection

von Balovsyak, S.V., Fodchuk, I.M., Lytvyn, P.M.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2003)

Determination of structural homogeneity of synthetic diamonds from analysis of Kikuchi lines intensity distribution

von Fodchuk, I., Balovsyak, S., Borcha, M., Garabazhiv, Ya., Tkach, V.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2010)

Character of elastic energy absorption in well developed genetic-impurity defect structure in monocrystalline silicon

von Gutsulyak, B.I., Oliynych-Lysyuk, A.V., Fodchuk, I.M.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2005)

Evolution of defective structure of the irradiated silicon during natural ageing

von Fodchuk, I.M., Gutsulyak, T.G., Himchynsky, O.G., Olijnich-Lysjuk, A.V., Raransky, N.D.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2003)

Solid state doping of CdxHg₁₋xTe epitaxial layers with elements of V group

von Vlasov, A.P., Bonchyk, A.Yu., Fodchuk, I.M., Barcz, A., Swiatek, Z.T., Zaplitnyy, R.A.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2006)

Some characteristics of semiconductor HgCdMnZnTe solid solution crystals

von Popenko, N., Ivanchenko, I., Brovenko, I., Zhigalov, A., Karelin, S., Gorbatyuk, I., Ostapov, S., Dremlyuzhenko, S., Rarenko, I., Zaplitnyi, R., Fodchuk, I., Deibuk, V.G.
Veröffentlicht in Functional Materials (2006)

Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells

von Fodchuk, I.M., Gevyk, V.B., Gimchinsky, O.G., Kislovskii, E.N., Kroytor, O.P., Molodkin, V.B., Olihovskii, S.I., Pavelescu, E.M., Pessa, M.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2003)

Magnetic force microscopy of YLaFeO films implanted by high dose of nitrogen ions

von Fodchuk, I.M., Gutsuliak, I.I., Zaplitniy, R.A., Balovsyak, S.V., Yaremiy, I.P., Bonchyk, O.Yu., Savitskiy, G.V., Syvorotka, I.M., Lytvyn, P.M.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2013)

Dynamical Theory of Triple-Crystal X-ray Diffractometry and Characterization of Microdefects and Strains in Imperfect Single Crystals

von Molodkin, V.B., Olikhovskii, S.I., Len, E.G., Kyslovskyy, Ye.M., Reshetnyk, O.V., Vladimirova, T.P., Sheludchenko, B.V., Skakunova, E.S., Lizunov, V.V., Kochelab, E.V., Fodchuk, I.M., Klad’ko, V.P.
Veröffentlicht in Металлофизика и новейшие технологии (2016)