Determination of surface parameters of solids by methods of X-ray total external reflection

за авторством Balovsyak, S.V., Fodchuk, I.M., Lytvyn, P.M.
Опубліковано 2003

Character of elastic energy absorption in well developed genetic-impurity defect structure in monocrystalline silicon

за авторством Gutsulyak, B.I., Oliynych-Lysyuk, A.V., Fodchuk, I.M.
Опубліковано 2005

Evolution of defective structure of the irradiated silicon during natural ageing

за авторством Fodchuk, I.M., Gutsulyak, T.G., Himchynsky, O.G., Olijnich-Lysjuk, A.V., Raransky, N.D.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2003)

Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells

за авторством Fodchuk, I.M., Gevyk, V.B., Gimchinsky, O.G., Kislovskii, E.N., Kroytor, O.P., Molodkin, V.B., Olihovskii, S.I., Pavelescu, E.M., Pessa, M.
Опубліковано 2003