Харвестер відкритої науки НАН України

Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions

von Belyaev, A.E., Foxon, C.T., Novikov, S.V., Makarovsky, O., Eaves, L., Kappers, M.J., Barnard, J.S., Humphreys, C.J., Danylyuk, S.V., Vitusevich, S.A., Naumov, A.V.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2004)