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Galchinetskii, L.
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Galchinetskii, L.
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Galchinetskii, L.
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1
Peculiarities of scintillation materials based on ZnS—ZnTe solid solutions
by
Katrunov, K.
,
Lalaiants, O.
,
Baumer, V.
,
Galkin, S.
,
Galchinetskii, L.
,
Brilyova, Ye.
Published in
Functional Materials
(2013)
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Select result number 2
2
Schottky structures nZnSe(O,Te)/Ni as candidates for selective ultraviolet detectors
by
Katrunov, K.
,
Starzhinskiy, N.
,
Grinyov, B.
,
Galchinetskii, L.
,
Bendeberya, G.
,
Bondarenko, E.
Published in
Functional Materials
(2008)
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Select result number 3
3
Effect of technology parameters on the quality of nZnSe(X)/Ni Schottky diodes
by
Katrunov, K.A.
,
Galchinetskii, L.P.
,
Grinyov, B.V.
,
Starzhinskiy, N.G.
,
Bendeberya, G.N.
,
Bondarenko, E.A.
Published in
Functional Materials
(2008)
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4
Small-grained detector of ionizing radiation based on ZnSe(Te)
by
Volkov, V.G.
,
Gavrilyuk, V.P.
,
Galchinetskii, L.P.
,
Grinyov, B.V.
,
Katrunov, K.A.
,
Ryzhikov, V.D.
Published in
Semiconductor Physics Quantum Electronics & Optoelectronics
(2000)
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5
Crystals Cd₁₋x ZnxTe – a promising material for non-cryogenic semiconductor detectors: preparations, structure defectness and electrophysical properties
by
Atroshchenko, L.V.
,
Galkin, S.N.
,
Galchinetskii, L.P.
,
Lalayants, A.I.
,
Rybalka, I.A.
,
Ryzhikov, V.D.
,
Silin, V.I.
,
Starzhinskii, N.G.
Published in
Semiconductor Physics Quantum Electronics & Optoelectronics
(1999)
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