Schottky structures nZnSe(O,Te)/Ni as candidates for selective ultraviolet detectors

• Veröffentlicht in: Functional Materials
• Datum: 2008
• Hauptverfasser: Katrunov, K., Starzhinskiy, N., Grinyov, B., Galchinetskii, L., Bendeberya, G., Bondarenko, E.
• Format: Artikel
• Sprache: English
• Veröffentlicht: НТК «Інститут монокристалів» НАН України 2008
• Schlagworte: Characterization and properties
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/135267
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Schottky structures nZnSe(O,Te)/Ni as candidates for selective ultraviolet detectors // K. Katrunov, N. Starzhinskiy, B. Grinyov, L. Galchinetskii, G. Bendeberya, E. Bondarenko // Functional Materials. — 2008. — Т. 15, № 3. — С. 364-368. — Бібліогр.: 4 назв. — англ.

Data on optical and electrophysical properties of photosensitive structures with Schottky barrier of nZnSe(O, Te)/Ni type are presented. The photoreceivers of this type have current sensitivity Sλ = 0.1-0.15 A/W for λ = 420-440 nm, and at λ = 250-270 nm Sλ is 0.02 A/W; the threshold sensitivity is ~...