Харвестер відкритої науки НАН України

Peculiarities of scintillation materials based on ZnS—ZnTe solid solutions

за авторством Katrunov, K., Lalaiants, O., Baumer, V., Galkin, S., Galchinetskii, L., Brilyova, Ye.
Опубліковано в: Functional Materials (2013)

Schottky structures nZnSe(O,Te)/Ni as candidates for selective ultraviolet detectors

за авторством Katrunov, K., Starzhinskiy, N., Grinyov, B., Galchinetskii, L., Bendeberya, G., Bondarenko, E.
Опубліковано в: Functional Materials (2008)

Effect of technology parameters on the quality of nZnSe(X)/Ni Schottky diodes

за авторством Katrunov, K.A., Galchinetskii, L.P., Grinyov, B.V., Starzhinskiy, N.G., Bendeberya, G.N., Bondarenko, E.A.
Опубліковано в: Functional Materials (2008)

Small-grained detector of ionizing radiation based on ZnSe(Te)

за авторством Volkov, V.G., Gavrilyuk, V.P., Galchinetskii, L.P., Grinyov, B.V., Katrunov, K.A., Ryzhikov, V.D.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2000)

Crystals Cd₁₋x ZnxTe – a promising material for non-cryogenic semiconductor detectors: preparations, structure defectness and electrophysical properties

за авторством Atroshchenko, L.V., Galkin, S.N., Galchinetskii, L.P., Lalayants, A.I., Rybalka, I.A., Ryzhikov, V.D., Silin, V.I., Starzhinskii, N.G.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (1999)