Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs за авторством Lysenko, V.S., Tyagulski, I.P., Gomeniuk, Y.V., Osiyuk, I.N.

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Effect of the charge state of traps on the transport current in the SiC/Si heterostructure за авторством Lysenko, V.S., Tyagulski, I.P., Gomeniuk, Y.V., Osiyuk, I.N.

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Properties of SiGe/Si heterostructures fabricated by ion implantation technique за авторством Gomeniuk, Y.V., Lysenko, V.S., Osiyuk, I.N., Tyagulski, I.P., Valakh, M.Ya., Yukhimchuk, V.A., Willander, M., Patel, C.J.

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