Харвестер відкритої науки НАН України

Optimization of temperature conditions for the growth of large-size sapphire crystals by the method of horizontally directed crystallization

за авторством Grin, L.A., Budnikov, A.T., Sidelnikova, N.S., Adonkin, G.T., Baranov, V.V.
Опубліковано в: Functional Materials (2013)

Phase transformations of alpha-Al₂O₃ during annealing in a reducing atmosphere

за авторством Dan`ko, A.Ya., Rom, M.A., Sidelnikova, N.S., Nizhankovsky, S.V., Grin`, L.A.
Опубліковано в: Functional Materials (2005)

Influence of melt convection on the dynamics and capture inclusions for growing oxide crystals by HDC

за авторством Naydenov, S.V., Nizhankovskiy, S.V., Tan′ko, A.V., Grin′, L.A., Baranov, V.V.
Опубліковано в: Functional Materials (2015)

Luminescence and radiation-induced defects in Li₂B₄O₇:Eu single crystals

за авторством Dubovik, M.F., Tolmachev, A.V., Grinyov, B.V., Grin, L.A., Dolzhenkova, E.F., Dobrotvorskaya, M.V.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2000)

Growing of sapphire for optics and optoelectronics by the HDC method in a protective atmosphere

за авторством Dan`ko, A.Ya., Nizhankovsky, S.V., Kanischev, V.N., Sidelnikova, N.S., Adonkin, G.T., Puzikov, V.M., Grin, L.A.
Опубліковано в: Functional Materials (2006)