Growing of sapphire for optics and optoelectronics by the HDC method in a protective atmosphere

• Опубліковано в: : Functional Materials
• Дата: 2006
• Автори: Dan`ko, A.Ya., Nizhankovsky, S.V., Kanischev, V.N., Sidelnikova, N.S., Adonkin, G.T., Puzikov, V.M., Grin, L.A.
• Формат: Стаття
• Мова: English
• Опубліковано: НТК «Інститут монокристалів» НАН України 2006
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/134176
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Growing of sapphire for optics and optoelectronics by the HDC method in a protective atmosphere / A.Ya.Dan`ko, S.V. Nizhankovsky, V.N. Kanischev, N.S. Sidelnikova, G.T. Adonkin, V.M. Puzikov, L.A. Grin // Functional Materials. — 2006. — Т. 13, № 3. — С. 426-431. — Бібліогр.: 9 назв. — англ.

The gas environment process formation in the furnace for sapphire growth by horizontal directional crystalliztion equipped by a graphite heating assembly has been studied during the evacuation and the inert gas (Ar, He) bleeding. The effect of the furnace blowing by the inert gas on concentration of...