Peculiarities of changes in the structure and electrophysical characteristics of n-Si under the effect of various thermal treatment regimes von H. P. Haidar

Volltext

On the methodology of tensoresistance determination for n-Ge and n-Si in the crystallographic directions 〈110〉 von H. P. Haidar

Volltext

Variations in electrophysical properties of heavily doped single crystals of n-Ge<As> under the effect of thermal annealings von H. P. Haidar

Volltext

On the methodology of determining the transverse tensoresistance in multi-valley semiconductors von H. P. Haidar

Volltext

Radiation and thermal stability of thin layers, he-terosystems and nanostructures, created on the basis of elementary semiconductors and semiconductor com-pounds von P. I. Baranskyi, H. P. Haidar

Volltext

Concentration and temperature dependences of thermoelectric characteristics of the elastically deformed silicon von H. P. Haidar, P. I. Baranskyi

Volltext

Dependence of the anisotropy parameter of drag thermal e.m.f. on the concentration of impurities in n-Ge and n-Si crystals von H. P. Haidar, P. I. Baranskyi

Volltext

Experimental evidence of invariability in the shape of n‑Ge isoenergetic ellipsoids influenced by strong uniaxial elastic strains von H. P. Haidar, P. I. Baranskyi

Volltext

Influence of Ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals von H. P. Haidar, P. I. Baranskyi

Volltext

Magnetotenso- and tensomagnetoresistance of n-Ge von P. I. Baranskyi, H. P. Haidar

Volltext

Experimental proof of the shape constancy for isoenergetic ellipsoids in n–Ge under strong uniaxial elastic deformation von H. P. Haidar, P. I. Baranskyi

Volltext

Comparison of the electrophysical properties of silicon crystals doped with phosphorus through the melt and by using the method of nuclear transmutation von P. I. Baranskyi, H. P. Haidar

Volltext

Influence of thermoannealings at 450 and 650 oC on the tensoresistance and anisotropy parameter in mobility of silicon single crystals von P. I. Baranskyi, H. P. Haidar

Volltext

Influence of the high-temperature annealing on the anisotropy parameters of mobility and the anisotropy of the thermoelectromotive-drag of electrons by phonons in n-Si von P. I. Baranskyi, H. P. Haidar

Volltext

Physical factors that cause the anisotropy of thermoelectromotive and the anisotropy of mobility in multivalley semiconductors von P. I. Baranskyi, H. P. Haidar

Volltext

About peculiarities of the anisotropy of thermoelectric effects in semiconductors, connected with the specific manifestations of many valleys von P. I. Baranskyi, H. P. Haidar

Volltext

The ordering effects of an n-Si defect structure, induced by high fluences of ions with MeV energies von H. P. Haidar, M. B. Pinkovska, M. I. Starchyk

Volltext

Development of nuclear technologies in the Institute For Nuclear Research, National Academy of Sciences of Ukraine von I. M. Vyshnevskyi, H. P. Haidar, O. V. Tretiakova, V. O. Haidar

Volltext