Peculiarities of changes in the structure and electrophysical characteristics of n-Si under the effect of various thermal treatment regimes за авторством H. P. Haidar

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On the methodology of tensoresistance determination for n-Ge and n-Si in the crystallographic directions 〈110〉 за авторством H. P. Haidar

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Variations in electrophysical properties of heavily doped single crystals of n-Ge<As> under the effect of thermal annealings за авторством H. P. Haidar

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On the methodology of determining the transverse tensoresistance in multi-valley semiconductors за авторством H. P. Haidar

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Radiation and thermal stability of thin layers, he-terosystems and nanostructures, created on the basis of elementary semiconductors and semiconductor com-pounds за авторством P. I. Baranskyi, H. P. Haidar

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Concentration and temperature dependences of thermoelectric characteristics of the elastically deformed silicon за авторством H. P. Haidar, P. I. Baranskyi

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Dependence of the anisotropy parameter of drag thermal e.m.f. on the concentration of impurities in n-Ge and n-Si crystals за авторством H. P. Haidar, P. I. Baranskyi

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Experimental evidence of invariability in the shape of n‑Ge isoenergetic ellipsoids influenced by strong uniaxial elastic strains за авторством H. P. Haidar, P. I. Baranskyi

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Influence of Ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals за авторством H. P. Haidar, P. I. Baranskyi

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Magnetotenso- and tensomagnetoresistance of n-Ge за авторством P. I. Baranskyi, H. P. Haidar

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Experimental proof of the shape constancy for isoenergetic ellipsoids in n–Ge under strong uniaxial elastic deformation за авторством H. P. Haidar, P. I. Baranskyi

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Comparison of the electrophysical properties of silicon crystals doped with phosphorus through the melt and by using the method of nuclear transmutation за авторством P. I. Baranskyi, H. P. Haidar

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Influence of thermoannealings at 450 and 650 oC on the tensoresistance and anisotropy parameter in mobility of silicon single crystals за авторством P. I. Baranskyi, H. P. Haidar

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Influence of the high-temperature annealing on the anisotropy parameters of mobility and the anisotropy of the thermoelectromotive-drag of electrons by phonons in n-Si за авторством P. I. Baranskyi, H. P. Haidar

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Physical factors that cause the anisotropy of thermoelectromotive and the anisotropy of mobility in multivalley semiconductors за авторством P. I. Baranskyi, H. P. Haidar

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About peculiarities of the anisotropy of thermoelectric effects in semiconductors, connected with the specific manifestations of many valleys за авторством P. I. Baranskyi, H. P. Haidar

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The ordering effects of an n-Si defect structure, induced by high fluences of ions with MeV energies за авторством H. P. Haidar, M. B. Pinkovska, M. I. Starchyk

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Development of nuclear technologies in the Institute For Nuclear Research, National Academy of Sciences of Ukraine за авторством I. M. Vyshnevskyi, H. P. Haidar, O. V. Tretiakova, V. O. Haidar

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