2025-02-22T16:32:23-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22open-sciencenbuvgovua-73127%22&qt=morelikethis&rows=5
2025-02-22T16:32:23-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22open-sciencenbuvgovua-73127%22&qt=morelikethis&rows=5
2025-02-22T16:32:23-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-22T16:32:23-05:00 DEBUG: Deserialized SOLR response
Influence of thermoannealings at 450 and 650 oC on the tensoresistance and anisotropy parameter in mobility of silicon single crystals

Influence of thermoannealings at 450 and 650 oC on the tensoresistance and anisotropy parameter in mobility of silicon single crystals

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Bibliographic Details
Main Authors: P. I. Baranskyi, H. P. Haidar
Format: Article
Language:English
Published: 2014
Series:Optoelectronics and Semiconductor Technique
Online Access:http://jnas.nbuv.gov.ua/article/UJRN-0000363505
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Internet

http://jnas.nbuv.gov.ua/article/UJRN-0000363505

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