Харвестер відкритої науки НАН України

Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation

von Houk, Y., Nazarov, A.N., Turchanikov, V.I., Lysenko, V.S., Andriaensen, S., Flandre, D.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2006)