Photoluminescence of porous nc-Si—SiOx nanostructures treated by HF vapors by V. A. Danko, I. Z. Indutnyi, K. V. Mykhailovska, Ye. Shepeliavyi

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The influence of the periodic relief of the silicon substrate on polarization of photoluminescence observed in nc-Si–SiOx nanostructures by K. V. Mykhailovska, V. I. Mynko, I. Z. Indutnyi, Ye. Shepeliavyi

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Nickel-induced enhancement of photo-luminescence in nc-Si-SiOx nanostructures by K. V. Michailovska, I. Z. Indutnyi, P. E. Shepeliavyi, V. A. Danko

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Reversible photodarkening in composite As2S3/SiOx nanostructures by V. A. Danko, I. Z. Indutnyi, O. F. Kolomys, V. V. Strelchuk, Ye. Shepeliavyi

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Polarization memory of the luminescence related with Si nanoparticles embedded into oxide matrix by K. V. Michailovska, I. Z. Indutnyi, O. O. Kudryavtsev, M. V. Sopinskyy, P. E. Shepeliavyi

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Investigation of the surface plasmon-polaritons excitation efficiency on aluminum gratings, taking into account diffracted radiation by I. Z. Indutnyi, V. I. Mynko, M. V. Sopinskyi, V. A. Danko, P. M. Lytvyn

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Polarization conversion effect in obliquely deposited SiOx films by M. V. Sopinskyy, I. Z. Indutnyi, K. V. Michailovska, P. E. Shepeliavy, V. M. Tkach

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Photoinduced etching of thin films of chalcogenide glasses by V. A. Danko, I. Z. Indutnyi, V. I. Mynko, Ye. Shepeliavyi, O. S. Lytvyn, M. V. Lukaniuk

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Photostimulated reversible changes in the Ge-Se films as a base of resistive process by I. V. Babiichuk, V. A. Danko, I. Z. Indutnyi, M. V. Lukaniuk, V. I. Mynko, Ye. Shepeliavyi

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Photostimulated etching of germanium chalcogenide films by V. A. Danko, I. Z. Indutnyi, V. I. Mynko, P. E. Shepeliavyi, M. V. Lukyanyuk, O. S. Litvin

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Growth of the photonic nanostruc-tures using interference lithography and oblique deposition in vacuum by I. Z. Indutnyi, V. I. Mynko, Ye. Shepeliavyi, M. V. Sopinskyi, V. M. Tkach, V. A. Danko

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Photolithography on photostimulated reversible and transient structural changes in CHG by V. A. Danko, I. Z. Indutnyi, M. V. Lukaniuk, V. I. Mynko, S. S. Ponomarov, Ye. Shepeliavyi, V. O. Yukhymchuk

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Control of photoluminescence spectra of porous nc-Si-SiOx structures by vapor treatment by V. A. Danko, Ya. Bratus, I. Z. Indutnyi, I. P. Lisovskyy, S. O. Zlobin, K. V. Michailovska, P. E. Shepeliavyi

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Control of plasmons excitation by P- and S-polarized light in gold nanowire gratings by azimuthal angle variation by V. A. Danko, I. Z. Indutnyi, V. I. Mynko, S. V. Mamykin, Ye. Shepeliavyi, M. V. Lukaniuk, P. M. Lytvyn

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Photoluminescence properties of silicon nanoparticlesinmultilayered (SiOx-SiOy)n structures with porousinsulatinglayers by K. V. Mykhailovska, V. A. Danko, O. Y. Hudymenko, V. P. Kladko, I. Z. Indutnyi, Ye. Shepeliavyi, M. V. Sopinskyi

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Nanostructured Au chips with enhanced sensitivity for sensors based on surface plasmon resonance by I. Z. Indutnyi, Yu. V. Ushenin, V. I. Mynko, Ye. Shepeliavyi, M. V. Lukaniuk, A. A. Korchovyi, R. V. Khrystosenko

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Influence of trap states on the kinetics of luminescence and induced light absorption by Si nanoparticles in a SiO2 matrix at their excitation with femtosecond laser pulses by V. M. Kadan, I. Z. Indutnyi, V. A. Danko, Ye. Shepeliavyi, I. M. Dmytruk, P. I. Koreniuk, I. V. Blonskyi

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Nanostructured Au chips with enhanced sensitivity for sensors based on surface plasmon resonance by I. Z. Indutnyi, Yu. V. Ushenin, V. I. Mynko, P. E. Shepeliavyi, M. V. Lukaniuk, A. A. Korchovyi, R. V. Khrystosenko

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Influence of trap states on the kinetics of luminescence and induced light absorption by Si nanoparticles in a SiO2 matrix at their excitation with femtosecond laser pulses by V. M. Kadan, I. Z. Indutnyi, V. A. Danko, P. E. Shepelyavyi, I. M. Dmitruk, P. I. Korenyuk, I. V. Blonsky

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Formation of submicron periodic plasmon structures of large area by using the interference lithography method with vacuum photoresists by V. A. Danko, M. L. Dmytruk, I. Z. Indutnyi, S. V. Mamykin, V. I. Mynko, P. M. Lytvyn, M. V. Lukaniuk, Ye. Shepeliavyi

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