Effect of microwave treatment on the parameters of Au-TiBx-GaAs(SiC 6H) surface-barrier structures by Abdizhaliev, S.K., Ismailov, K.A., Kamalov, A.B., Kudrik, Ya.Ya.

Get full text

Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system by Konakova, R.V., Milenin, V.V., Voitsikhovskyi, D.I., Kamalov, A.B., Kolyadina, E.Yu., Lytvyn, P.M., Lytvyn, O.S., Matveeva, L.A., Prokopenko, I.V.

Get full text

New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis by Arsentyev, I.N., Bobyl, A.V., Tarasov, I.S., Shishkov, M.V., Boltovets, N.S., Ivanov, V.N., Kamalov, A.B., Konakova, R.V., Kudryk, Ya.Ya., Lytvyn, O.S., Lytvyn, P.M., Markovskiy, E.P., Milenin, V.V.

Get full text