Effect of microwave treatment on the parameters of Au-TiBx-GaAs(SiC 6H) surface-barrier structures за авторством Abdizhaliev, S.K., Ismailov, K.A., Kamalov, A.B., Kudrik, Ya.Ya.

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Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system за авторством Konakova, R.V., Milenin, V.V., Voitsikhovskyi, D.I., Kamalov, A.B., Kolyadina, E.Yu., Lytvyn, P.M., Lytvyn, O.S., Matveeva, L.A., Prokopenko, I.V.

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New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis за авторством Arsentyev, I.N., Bobyl, A.V., Tarasov, I.S., Shishkov, M.V., Boltovets, N.S., Ivanov, V.N., Kamalov, A.B., Konakova, R.V., Kudryk, Ya.Ya., Lytvyn, O.S., Lytvyn, P.M., Markovskiy, E.P., Milenin, V.V.

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