Effect of microwave treatment on the parameters of Au-TiBx-GaAs(SiC 6H) surface-barrier structures

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2003
• Hauptverfasser: Abdizhaliev, S.K., Ismailov, K.A., Kamalov, A.B., Kudrik, Ya.Ya.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118018
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Effect of microwave treatment on the parameters of Au-TiBx-GaAs(SiC 6H) surface-barrier structures / S.K. Abdizhaliev, K.A. Ismailov, A.B. Kamalov, Ya.Ya. Kudrik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 202-204. — Бібліогр.: 14 назв. — англ.

We studied I-V curves of Au-TiBx-n-n⁺-GaAs and Au-TiBx-n-SiC 6Н surface-barrier structures. The structures were exposed to microwave treatments (frequency of 2.45 GHZ, irradiance of 1.5 W/cm², duration of 0-500 s). For these structures we measured how the Schottky barrier height and ideality factor...