The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts by Belyaev, A.E., Boltovets, N.S., Kapitanchuk, L.M., Konakova, R.V., Kladko, V.P., Kudryk, Ya.Ya., Kuchuk, A.V., Lytvyn, O.S., Milenin, V.V., Korostinskaya, T.V., Ataubaeva, A.B., Nevolin, P.V.

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Role of dislocations in formation of ohmic contacts to heavily doped n-Si by Belyaev, A.E., Pilipenko, V.A., Anischik, V.M., Petlitskaya, T.V., Klad’ko, V.P., Konakova, R.V., Boltovets, N.S., Korostinskaya, T.V., Kapitanchuk, L.M., Kudryk, Ya.Ya., Vinogradov, A.O., Sheremet, V.N.

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On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n⁺ -n doping step by Sachenko, A.V., Belyaev, A.E., Boltovets, N.S., Vinogradov, A.O., Pilipenko, V.A., Petlitskaya, T.V., Anischik, V.M., Konakova, R.V., Korostinskaya, T.V., Kostylyov, V.P., Kudryk, Ya.Ya., Lyapin, V.G., Romanets, P.N., Sheremet, V.N.

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