Role of dislocations in formation of ohmic contacts to heavily doped n-Si

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2013
• Main Authors: Belyaev, A.E., Pilipenko, V.A., Anischik, V.M., Petlitskaya, T.V., Klad’ko, V.P., Konakova, R.V., Boltovets, N.S., Korostinskaya, T.V., Kapitanchuk, L.M., Kudryk, Ya.Ya., Vinogradov, A.O., Sheremet, V.N.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/117675
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Role of dislocations in formation of ohmic contacts
 to heavily doped n-Si / A.E. Belyaev, V.A. Pilipenko, V.M. Anischik, T.V. Petlitskaya, A.V. Sachenko, V.P. Klad’ko, R.V. Konakova, N.S. Boltovets, T.V. Korostinskaya, L.M. Kapitanchuk, Ya.Ya. Kudryk, A.O. Vinogradov, V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 99-110. — Бібліогр.: 35 назв. — англ.

We present experimental results concerning a high density of structural defects
 (in particular, dislocations) in the near-contact region of heavily doped n-silicon. They
 appear in the course of firing Au Pd Ti Pd -Si n ohmic contact at 450С for
 10 min in a vacuum of ~10 Pa...