Search Results - Kostylyov, V.
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Experimental study and theoretical analysis of photoelectric characteristics of AlxGa₁₋xAs–p-GaAs–n-GaAs-based photoconverters with relief interfaces by Dmitruk, N.L., Borkovskaya, O.Yu., Kostylyov, V.E., Sachenko, A.V., Sokolovskiy, I.O.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2005)Get full text
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The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. Long Shockley–Read–Hall lifetimes by Sachenko, A.V., Kostylyov, V.P., Vlasiuk, V.M., Sokolovskyi, I.O., Evstigneev, M.A.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2016)Get full text
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Electro-optical characteristics of an innovative LED luminaire with an LED matrix cooling system based on heat pipes by Pekur, D.V., Sorokin, V.M., Nikolaenko, Yu.E., Kostylyov, V.P., Solntsev, V.S., Ponomarenko, V.V.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2020)Get full text
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Optoelectronics and optoelectronic devices
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Hetero- and low-dimensional structures
silicon solar cells
surface photovoltage
surface recombination
кремнiєвi сонячнi елементи
Lectures, Presentations
Optics
Photoconduction and photovoltaic effects
Polymers and organic compounds
Semiconductor physics
Surface physics
Urbach effect
deep recombination level
diffusion length
emitter
heat treatments
influence of surface centers
near-surface layer
perovskite film
photosensitive silicon structure
recombination current
recombination losses
silicon
silicon dioxide layer
space charge region
transmission spectra
Полімери і органічні сполуки
Результати наукових досліджень