2025-02-22T01:42:51-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22ujp2-article-2019029%22&qt=morelikethis&rows=5
2025-02-22T01:42:51-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22ujp2-article-2019029%22&qt=morelikethis&rows=5
2025-02-22T01:42:51-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-22T01:42:51-05:00 DEBUG: Deserialized SOLR response
Особливостi формування рекомбiнацiйного струму в областi просторового заряду кремнiєвих сонячних елементiв

Особливостi формування рекомбiнацiйного струму в областi просторового заряду кремнiєвих сонячних елементiв

Dark I–V curves of silicon solar cells with various Shockley–Reed–Hall lifetimes have been studied. The lifetimes are determined from the short-circuit-current internal quantum yield. The recombination currents in the space charge region (SCR) are found to be formed within time intervals that are at...

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Bibliographic Details
Main Authors: Sachenko, A. V., Kostylyov, V. P., Vlasiuk, V. M., Korkishko, R. M., Sokolovs’kyi, I. O., Chernenko, V. V.
Format: Article
Language:English
Ukrainian
Published: Publishing house "Academperiodika" 2019
Subjects:
рекомбiнацiйний струм
область просторового заряду
кремнiєвi сонячнi елементи
глибокий рекомбiнацiйний рiвень
recombination current
space charge region
silicon solar cells
deep recombination level
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Online Access:https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019029
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https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019029

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