Харвестер відкритої науки НАН України

Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons

за авторством Dolgolenko, A.P., Litovchenko, P.G., Litovchenko, A.P., Varentsov, M.D., Lastovetsky, V.F., Gaidar, G.P.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2004)

Semiconductor sensors for dosimetry of epithermal neutrons

за авторством Litovchenko, P.G., Moss, R., Stecher-Rasmussen, F., Appelman, K., Barabash, L.I., Kibkalo, T.I., Lastovetsky, V.F., Litovchenko, A.P., Pinkovska, M.B.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (1999)

Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide

за авторством Litovchenko, P.G., Wahl, W., Groza, A.A., Dolgolenko, A.P., Karpenko, A.Ya., Khivrych, V.I., Litovchenko, O.P., Lastovetsky, V.F., Sugakov1, V.I., Dubovy, V.K.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2001)