Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons
Silicon n-type samples with resistivity ~2.5*10³ Ohm*cm grown by the method of a floating-zone in vacuum (FZ), in argon tmosphere (Ar) and received by the method of transmutation doping (NTD) are investigated before and after irradiation by various doses of fastpile neutrons at room temperature. The...
Saved in:
| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2004 |
| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118106 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons / A.P. Dolgolenko, P.G. Litovchenko, A.P. Litovchenko, M.D. Varentsov, V.F. Lastovetsky, G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 8-15. — Бібліогр.: 23 назв. — англ. |