Харвестер відкритої науки НАН України

Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons

von Dolgolenko, A.P., Litovchenko, P.G., Litovchenko, A.P., Varentsov, M.D., Lastovetsky, V.F., Gaidar, G.P.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2004)

Semiconductor sensors for dosimetry of epithermal neutrons

von Litovchenko, P.G., Moss, R., Stecher-Rasmussen, F., Appelman, K., Barabash, L.I., Kibkalo, T.I., Lastovetsky, V.F., Litovchenko, A.P., Pinkovska, M.B.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (1999)

Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide

von Litovchenko, P.G., Wahl, W., Groza, A.A., Dolgolenko, A.P., Karpenko, A.Ya., Khivrych, V.I., Litovchenko, O.P., Lastovetsky, V.F., Sugakov1, V.I., Dubovy, V.K.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2001)