Properties and application of ultrasonic Lamb waves in CdxHg₁₋xTe plates by Lysiuk, I.O., Machulin, V.F., Olikh, Ja.M.

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Interface model of low temperature plasticity in high uniaxially strained monocrystalline semiconductors by Venger, Ye.F., Kolomoets, V.V., Machulin, V.F.

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Effect of temperature variation on shift and broadening of exciton band in Cs₃Bi₂I₉ layered crystals by Machulin, V.F., Motsnyi, F.V., Peresh, E.Yu., Smolanka, O.M., Svechnikov, G.S.

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Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals by Klad'ko, V. P., Grigoriev, D.O., Datsenko, L.I., Machulin, V.F., Prokopenko, I.V.

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X-ray diffraction study of deformation state in InGaN/GaN multilayered structures by Kladko, V.P., Kuchuk, A.V., Safryuk, N.V., Machulin, V.F., Belyaev, A.E., Konakova, R.V., Yavich, B.S.

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Investigation of superlattice structure parameters using quasi-forbidden reflections by Kladko, V.P., Datsenko, L.I., Korchovyi, A.A., Machulin, V.F., Lytvyn, P.M., Shalimov, A.V., Kuchuk, A.V., Kogutyuk, P.P.

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Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals by Budzulyak, S.I., Ermakov, V.M., Kyjak, B.R., Kolomoets, V.V., Machulin, V.F., Novoselets, M.K., Panasjuk, L.I., Sus', B.B., Venger, E.F.

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Structure perfection variations of Si crystals grown by Czochralski or floating zone methods after implantation of oxygen or neon atoms followed by annealing by Datsenko, L.I., Auleytner, J., Misiuk, A., Klad'ko, V.P., Machulin, V.F., Bak-Misiuk, J., Zymierska, D., Antonova, I.V., Melnyk, V.M., Popov, V.P., Czosnyka, T., Choinski, J.

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