Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist von Min’ko, V.I., Shepeliavyi, P.E., Indutnyy, I.Z., Litvin, O.S.

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Effect of acetone vapor treatment on photoluminescence of porous nc-Si–SiOx nanostructures von Indutnyi, I.Z., Michailovska, K.V., Min’ko, V.I., Shepeliavyi, P.E.

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Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films von Indutnyy, I.Z., Lysenko, V.S., Min'ko, V.I., Nazarov, A.N., Tkachenko, A.S., Shepeliavyi, P.E., Dan'ko, V.A., Maidanchuk, I.Yu.

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Features of mechanical scanning probe lithography on graphene oxide and As(Ge)Se chalcogenide resist von Lytvyn, P.M., Malyuta, S.V., Indutnyi, I.Z., Efremov, A.A., Slobodyan, O.V., Min’ko, V.I., Nazarov, A.N., Borysov, O.V., Prokopenko, I.V.

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Efficient SERS substrates based on laterally ordered gold nanostructures made using interference lithography von Hreshchuk, O.M., Yukhymchuk, V.O., Dzhagan, V.M., Danko, V.A., Min'ko, V.I., Indutnyi, I.Z., Shepeliavyi, P.Ye., Lytvyn, P.M., Sheregii, E., Prokhorenko, S., Polit, J., Zak, D., Płoch, D., Valakh, M.Ya.

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