Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist за авторством Min’ko, V.I., Shepeliavyi, P.E., Indutnyy, I.Z., Litvin, O.S.

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Effect of acetone vapor treatment on photoluminescence of porous nc-Si–SiOx nanostructures за авторством Indutnyi, I.Z., Michailovska, K.V., Min’ko, V.I., Shepeliavyi, P.E.

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Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films за авторством Indutnyy, I.Z., Lysenko, V.S., Min'ko, V.I., Nazarov, A.N., Tkachenko, A.S., Shepeliavyi, P.E., Dan'ko, V.A., Maidanchuk, I.Yu.

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Features of mechanical scanning probe lithography on graphene oxide and As(Ge)Se chalcogenide resist за авторством Lytvyn, P.M., Malyuta, S.V., Indutnyi, I.Z., Efremov, A.A., Slobodyan, O.V., Min’ko, V.I., Nazarov, A.N., Borysov, O.V., Prokopenko, I.V.

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Efficient SERS substrates based on laterally ordered gold nanostructures made using interference lithography за авторством Hreshchuk, O.M., Yukhymchuk, V.O., Dzhagan, V.M., Danko, V.A., Min'ko, V.I., Indutnyi, I.Z., Shepeliavyi, P.Ye., Lytvyn, P.M., Sheregii, E., Prokhorenko, S., Polit, J., Zak, D., Płoch, D., Valakh, M.Ya.

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