Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist by Min’ko, V.I., Shepeliavyi, P.E., Indutnyy, I.Z., Litvin, O.S.

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Effect of acetone vapor treatment on photoluminescence of porous nc-Si–SiOx nanostructures by Indutnyi, I.Z., Michailovska, K.V., Min’ko, V.I., Shepeliavyi, P.E.

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Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films by Indutnyy, I.Z., Lysenko, V.S., Min'ko, V.I., Nazarov, A.N., Tkachenko, A.S., Shepeliavyi, P.E., Dan'ko, V.A., Maidanchuk, I.Yu.

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Features of mechanical scanning probe lithography on graphene oxide and As(Ge)Se chalcogenide resist by Lytvyn, P.M., Malyuta, S.V., Indutnyi, I.Z., Efremov, A.A., Slobodyan, O.V., Min’ko, V.I., Nazarov, A.N., Borysov, O.V., Prokopenko, I.V.

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Efficient SERS substrates based on laterally ordered gold nanostructures made using interference lithography by Hreshchuk, O.M., Yukhymchuk, V.O., Dzhagan, V.M., Danko, V.A., Min'ko, V.I., Indutnyi, I.Z., Shepeliavyi, P.Ye., Lytvyn, P.M., Sheregii, E., Prokhorenko, S., Polit, J., Zak, D., Płoch, D., Valakh, M.Ya.

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