Isothermal growth kinetics of CdxHg₁₋xTe LPE layers за авторством Moskvin, P.P., Khodakovsky, V.V.

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Influence of elastic strains on LPE growth kinetics in the Cd-Hg-Te System за авторством Moskvin, P.P., Rashkovetsky, L.V., Khodakovsky, V.V.

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Polyassociative thermodynamical model of A²B⁶ semiconductor melt and phase equilibrium in Cd-Hg-Te system: 3. Optimization of the thermodynamical functions of the model and quasi-b... за авторством Moskvin, P.P., Rashkovetskiy, L.V., Stronski, A.V.

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Polyassociative thermodynamic model of A²B⁶ semiconductor meltand phase equilibria in Cd-Hg-Te system. 4. p-T-x diagram of Cd-Hg-Te system за авторством Moskvin, P.P., Khodakovsky, V.V., Rashkovets’kyi, L.V.

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Polyassociative thermodynamical model of A²B⁶ semiconductor melt and P-T-X equilibria in Cd-Hg-Te system: 2. Phase equilibria in initial two-component systems. Cd-Te system за авторством Moskvin, P.P., Rashkovets'kyi, L.V., Kavertsev, S.V., Zhovnir, G.I., Ruden'kyi, A.O.

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Polyassociative thermodynamical model of A₂B₆ semiconductor melt and P-T-X equilibria in Cd-Hg-Te system: 1. Phase equilibria in initial two-component systems. Hg-Te system за авторством Moskvin, P.P., Rashkovets'kyi, L.V., Kavertsev, S.V., Zhovnir, G.I., Ruden'kyi, A.O.

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