Influence of deep-level impurities on the strain electric properties of monocrystalline silicon von S. Zainabidinov, O. O. Mamatkarimov, O. Khimmatkulov, I. G. Tursunov

Volltext

Influence of deep-level impurities on the strain electric properties of monocrystalline silicon von S. Zainabidinov, O. O. Mamatkarimov, O. Khimmatkulov, I. G. Tursunov

Volltext

Relaxation changes in the mobility and concentration of charge carriers in Si with deep impurity levels under the action of pulsed pressure von O. O. Mamatkarimov, Kh. Khamidov, R. G. Zhabborov, U. A. Tujchiev, Kh. Kuchkarov

Volltext