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Oksanich, A.P.
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Oksanich, A.P.
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Oksanich, A.P.
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Mathematic modeling the oxygen distribution mechanism in Si ingots during growing processes
by
Oksanich, A.P.
,
Pritchin, S.E.
,
Vasheruk, A.V.
Published in
Semiconductor Physics Quantum Electronics & Optoelectronics
(2004)
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2
Influence of gas adsorption on the impedance of porous GaAs
by
Milovanov, Y.S.
,
Gavrilchenko, I.V.
,
Kondratenko, S.V.
,
Oksanich, A.P.
,
Pritchin, S.E.
,
Kogdas, M.G.
Published in
Functional Materials
(2017)
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3
Вплив телуру на деградацiйну стiйкiсть кристалiв напiвiзолюючого арсенiду галiю
by
Klyui, N. I.
,
Liptuga, A. I.
,
Lozinskii, V. B.
,
Oksanich, A. P.
,
Pritchin, S. E.
,
Fomovskii, F. V.
,
Yukhymchuk, V. O.
Published 2018
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Related Subjects
81.40.Tv
Characterization and properties
Czochralski technique
PACS 78.30.Fs
degradation stability of crystals
internal mechanical stresses
внутрiшнi механiчнi напруження
деградацiйна стiйкiсть кристалiв
метод Чохральського