Харвестер відкритої науки НАН України

Features of current-voltage characteristics inherent to GaP light-emitting diodes with quantum wells

von Konoreva, O., Opilat, V., Pinkovska, M., Tartachnyk, V.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2006)

Peculiarities of optical absorption near-edge in irradiated GaP:Te

von Konoreva, O., Litovchenko, P., Manzhara, V., Opilat, V., Tartachnyk, V.
Veröffentlicht in Functional Materials (2010)

Peculiarities of neutron irradiation influence on GaP light-emitting structures

von Litovchenko, P., Litovchenko, A., Konoreva, O., Opilat, V., Pinkovska, M., Tartachnyk, V.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2009)

Radiation influence on characteristics of GaP light emitting diodes

von Borzakovskyj, A., Gontaruk, O., Kochkin, V., Litovchenko, P., Opilat, V., Petrenko, I., Tartachnyk, V.
Veröffentlicht in Functional Materials (2009)

Radiative recombination in initial and electron-irradiated GaP crystals

von Hontaruk, O., Konoreva, O., Litovchenko, P., Manzhara, V., Opilat, V., Pinkovska, M., Tartachnyk, V.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2010)

Degradation of voltage-current characteristics of gallium phosphide diodes due to radiation-induced defects

von Dubovyi, V.K., Kanevsky, S.O., Litovchenko, P.G., Opilat, V.Ya., Tartachnik, V.P.
Veröffentlicht in Functional Materials (2005)

Ultrasound influence on exciton emission of GaP light diodes

von Gontaruk, O.M., Khivrych, V.I., Pinkovska, M.B., Tartachnyk, V.P., Olikh, Ya.M., Vernydub, R.M., Opilat, V.Ya.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2003)

Study of gamma field induced degradation of green GaP light diode electroluminescence characteristics

von Kanevsky, S.O., Litovchenko, P.G., Opilat, V.Ja., Tartachnyk, V.P., Pinkovs'ka, M.B., Shakhov, O.P., Shapar, V.M.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2003)