Peculiarities of optical absorption near-edge in irradiated GaP:Te von Konoreva, O., Litovchenko, P., Manzhara, V., Opilat, V., Tartachnyk, V.

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Peculiarities of neutron irradiation influence on GaP light-emitting structures von Litovchenko, P., Litovchenko, A., Konoreva, O., Opilat, V., Pinkovska, M., Tartachnyk, V.

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Radiative recombination in initial and electron-irradiated GaP crystals von Hontaruk, O., Konoreva, O., Litovchenko, P., Manzhara, V., Opilat, V., Pinkovska, M., Tartachnyk, V.

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Radiation influence on characteristics of GaP light emitting diodes von Borzakovskyj, A., Gontaruk, O., Kochkin, V., Litovchenko, P., Opilat, V., Petrenko, I., Tartachnyk, V.

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Self-organization in irradiated semiconductor crystals caused by thermal annealing von Zavada, M., Konoreva, O., Lytovchenko, P., Opilat, V., Pinkovska, M., Radkevych, O., Tartachnyk, V.

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Degradation of voltage-current characteristics of gallium phosphide diodes due to radiation-induced defects von Dubovyi, V.K., Kanevsky, S.O., Litovchenko, P.G., Opilat, V.Ya., Tartachnik, V.P.

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Ultrasound influence on exciton emission of GaP light diodes von Gontaruk, O.M., Khivrych, V.I., Pinkovska, M.B., Tartachnyk, V.P., Olikh, Ya.M., Vernydub, R.M., Opilat, V.Ya.

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