Study of gamma field induced degradation of green GaP light diode electroluminescence characteristics

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2003
• Автори: Kanevsky, S.O., Litovchenko, P.G., Opilat, V.Ja., Tartachnyk, V.P., Pinkovs'ka, M.B., Shakhov, O.P., Shapar, V.M.
• Формат: Стаття
• Мова: English
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/118091
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Study of gamma field induced degradation of green GaP light diode electroluminescence characteristics / S.O. Kanevsky, P.G. Litovchenko, V.Ja. Opilat, V.P. Tartachnyk, M.B. Pinkovs'ka, O.P. Shakhov, V.M. Shapar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 499-504. — Бібліогр.: 13 назв. — англ.

Optical and electrical properties of green GaP light diode irradiated by gammairradiation have been studied. Long-lasting relaxation processes on electroluminescence curve of diodes had been observed which one could connect with dark line defects DLD and dark spot defects DSD. Fine structure of nega...