Radiation and thermal stability of thin layers, he-terosystems and nanostructures, created on the basis of elementary semiconductors and semiconductor com-pounds за авторством P. I. Baranskyi, H. P. Haidar

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Concentration and temperature dependences of thermoelectric characteristics of the elastically deformed silicon за авторством H. P. Haidar, P. I. Baranskyi

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Dependence of the anisotropy parameter of drag thermal e.m.f. on the concentration of impurities in n-Ge and n-Si crystals за авторством H. P. Haidar, P. I. Baranskyi

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Experimental evidence of invariability in the shape of n‑Ge isoenergetic ellipsoids influenced by strong uniaxial elastic strains за авторством H. P. Haidar, P. I. Baranskyi

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Influence of Ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals за авторством H. P. Haidar, P. I. Baranskyi

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Magnetotenso- and tensomagnetoresistance of n-Ge за авторством P. I. Baranskyi, H. P. Haidar

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Experimental proof of the shape constancy for isoenergetic ellipsoids in n–Ge under strong uniaxial elastic deformation за авторством H. P. Haidar, P. I. Baranskyi

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Comparison of the electrophysical properties of silicon crystals doped with phosphorus through the melt and by using the method of nuclear transmutation за авторством P. I. Baranskyi, H. P. Haidar

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Influence of thermoannealings at 450 and 650 oC on the tensoresistance and anisotropy parameter in mobility of silicon single crystals за авторством P. I. Baranskyi, H. P. Haidar

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Influence of the high-temperature annealing on the anisotropy parameters of mobility and the anisotropy of the thermoelectromotive-drag of electrons by phonons in n-Si за авторством P. I. Baranskyi, H. P. Haidar

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Physical factors that cause the anisotropy of thermoelectromotive and the anisotropy of mobility in multivalley semiconductors за авторством P. I. Baranskyi, H. P. Haidar

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About peculiarities of the anisotropy of thermoelectric effects in semiconductors, connected with the specific manifestations of many valleys за авторством P. I. Baranskyi, H. P. Haidar

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Contents of doping and background impurities in Si single crystals, obtained by czucibleless electron-beam zone melting за авторством Yu. A. Asnis, P. I. Baranskyi, V. M. Babych, N. V. Piskun, I. I. Statkevych

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