Magnetic susceptibility of p-Si(B) single crystals grown in "vacancy" regime at presence of thermodonors created by thermal treatments at 450 °C by Babych, V.M., Luchkevych, M.M., Pavlovskyy, Yu.V., Tsmots, V.M.

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Electrophysical characteristics of GaAs₁₋ₓPₓ LEDs irradiated by 2 MeV electrons by Vernydub, R.M., Kyrylenko, O.I., Konoreva, O.V., Olikh, Ya.M., Litovchenko, P.G., Pavlovskyy, Yu.V., Potera, P., Tartachnyk, V.P.

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