Electrophysical characteristics of GaAs₁₋ₓPₓ LEDs irradiated by 2 MeV electrons
Commercial orange and yellow GaAs₁₋ₓPₓ LEDs were irradiated by 2 MeV electrons with fluences of 10¹⁴…2·10¹⁶ сm⁻², and their electrophysical characteristics were investigated in the current and voltage generators modes. It has been shown that point radiation defects introduced into GaAs₁₋ₓPₓ diodes r...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2020 |
| Main Authors: | , , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2020
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| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/215709 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Electrophysical characteristics of GaAs₁₋ₓPₓ LEDs irradiated by 2 MeV electrons / R.M. Vernydub, O.I. Kyrylenko, O.V. Konoreva, Ya.M. Olikh, P.G. Litovchenko, Yu.V. Pavlovskyy, P. Potera, V.P. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2020. — Т. 23, № 2. — С. 201-207. — Бібліогр.: 17 назв. — англ. |