Electrophysical characteristics of GaAs₁₋ₓPₓ LEDs irradiated by 2 MeV electrons

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2020
• Автори: Vernydub, R.M., Kyrylenko, O.I., Konoreva, O.V., Olikh, Ya.M., Litovchenko, P.G., Pavlovskyy, Yu.V., Potera, P., Tartachnyk, V.P.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2020
• Теми: Optoelectronics and optoelectronic devices
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/215709
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Electrophysical characteristics of GaAs₁₋ₓPₓ LEDs irradiated by 2 MeV electrons / R.M. Vernydub, O.I. Kyrylenko, O.V. Konoreva, Ya.M. Olikh, P.G. Litovchenko, Yu.V. Pavlovskyy, P. Potera, V.P. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2020. — Т. 23, № 2. — С. 201-207. — Бібліогр.: 17 назв. — англ.

Commercial orange and yellow GaAs₁₋ₓPₓ LEDs were irradiated by 2 MeV electrons with fluences of 10¹⁴…2·10¹⁶ сm⁻², and their electrophysical characteristics were investigated in the current and voltage generators modes. It has been shown that point radiation defects introduced into GaAs₁₋ₓPₓ diodes r...