Role of dislocations in formation of ohmic contacts to heavily doped n-Si за авторством Belyaev, A.E., Pilipenko, V.A., Anischik, V.M., Petlitskaya, T.V., Klad’ko, V.P., Konakova, R.V., Boltovets, N.S., Korostinskaya, T.V., Kapitanchuk, L.M., Kudryk, Ya.Ya., Vinogradov, A.O., Sheremet, V.N.

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On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n⁺ -n doping step за авторством Sachenko, A.V., Belyaev, A.E., Boltovets, N.S., Vinogradov, A.O., Pilipenko, V.A., Petlitskaya, T.V., Anischik, V.M., Konakova, R.V., Korostinskaya, T.V., Kostylyov, V.P., Kudryk, Ya.Ya., Lyapin, V.G., Romanets, P.N., Sheremet, V.N.

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