Modeling of In₀.₁₇Ga₀.₈₃N/InₓGa₁₋ₓN/AlyGa₁₋yN light emitting diode structure on ScAlMgO₄ (0001) substrate for high intensity red emission von Hussain, S., Rahman, Md.M., Prodhan, Md.T.

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Simulation analysis to optimize the performance of a homojunction -- In₀.₇Ga₀.₃N solar cell von Hussain, S., Prodhan, Md. T., Rahman, Md. M.

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