Simulation analysis to optimize the performance of a homojunction -- In₀.₇Ga₀.₃N solar cell
Simulation analysis has been carried out to determine the perfect structural parameters of a homojunction -- In₀.₇Ga₀.₃N solar cell to obtain maximum overall efficiency. It has been demonstrated that a -layer of 16 nm, an intrinsic layer (-layer) of 0.5-μm, and a -layer of 3-μm thickness with speci...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2021 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2021
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| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/216176 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Simulation analysis to optimize the performance of homojunction -- In₀.₇Ga₀.₃N solar cell / S. Hussain, Md. T. Prodhan, Md. M. Rahman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2021. — Т. 24, № 2. — С. 192-199. — Бібліогр.: 30 назв. — англ. |