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Electron and hole effective masses in heavily boron-doped silicon nanostructures determined using cyclotron resonance experiments von Savchenko, D.V., Kalabukhova, E.N., Shanina, B.D., Bagraev, N.T., Klyachkin, L.E., Malyarenko, A.M., Khromov, V.S.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2018)Volltext
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