Chemical composition and light emission properties of Si-rich-SiOx layers prepared by magnetron sputtering von Khomenkova, L., Korsunska, N., Sheinkman, M., Stara, T.

Volltext

Theoretical approach to electrodiffusion of shallow donors in semiconductors: I. Stationary limit von Kashirina, N.I., Kislyuk, V.V., Sheinkman, M.K.

Volltext

Properties of the shallow D-centers in semiconductors with polar and covalent binding von Kashirina, N.I., Lakhno, V.D., Sychyov, V.V., Sheinkman, M.K.

Volltext

Role of silicon oxide defects in emission process of Si-SiO₂ systems von Baran, M., Bulakh, B., Korsunska, N., Khomenkova, L., Yukhymchuk, V., Sheinkman, M.

Volltext

Electron-enhanced reactions responsible for photoluminescence spectrum change in II-VI compounds von Korsunskaya, N. E., Markevich, I. V., Dzhumaev, B. R., Borkovskaya, L. V., Sheinkman, M. K.

Volltext

Influence of cation vacancy related defects on the self-assembly processes in CdSe/ZnSe quantum dot heterostructures von Borkovska, L.V., Korsunska, N.O., Kushnirenko, V.I., Sadofyev, Yu.G., Sheinkman, M.K.

Volltext

The nature of red emission in porous silicon von Khomenkova, L.Yu., Korsunska, N.E., Bulakh, B.M., Sheinkman, M.K., Stara, T.R.

Volltext

About the nature of diffusion anisotropy in CdS crystals von Borkovskaya, L.V., Dzhumaev, B.R., Khomenkova, L.Yu., Korsunskaya, N.E., Markevich, I.V., Sheinkman, M.K.

Volltext