Chemical composition and light emission properties of Si-rich-SiOx layers prepared by magnetron sputtering

за авторством Khomenkova, L., Korsunska, N., Sheinkman, M., Stara, T.
Опубліковано 2007

Theoretical approach to electrodiffusion of shallow donors in semiconductors: I. Stationary limit

за авторством Kashirina, N.I., Kislyuk, V.V., Sheinkman, M.K.
Опубліковано 1998

Properties of the shallow D-centers in semiconductors with polar and covalent binding

за авторством Kashirina, N.I., Lakhno, V.D., Sychyov, V.V., Sheinkman, M.K.
Опубліковано 2003

Role of silicon oxide defects in emission process of Si-SiO₂ systems

за авторством Baran, M., Bulakh, B., Korsunska, N., Khomenkova, L., Yukhymchuk, V., Sheinkman, M.
Опубліковано 2003

Electron-enhanced reactions responsible for photoluminescence spectrum change in II-VI compounds

за авторством Korsunskaya, N. E., Markevich, I. V., Dzhumaev, B. R., Borkovskaya, L. V., Sheinkman, M. K.
Опубліковано 1999

Influence of cation vacancy related defects on the self-assembly processes in CdSe/ZnSe quantum dot heterostructures

за авторством Borkovska, L.V., Korsunska, N.O., Kushnirenko, V.I., Sadofyev, Yu.G., Sheinkman, M.K.
Опубліковано 2003

The nature of red emission in porous silicon

за авторством Khomenkova, L.Yu., Korsunska, N.E., Bulakh, B.M., Sheinkman, M.K., Stara, T.R.
Опубліковано 2005

About the nature of diffusion anisotropy in CdS crystals

за авторством Borkovskaya, L.V., Dzhumaev, B.R., Khomenkova, L.Yu., Korsunskaya, N.E., Markevich, I.V., Sheinkman, M.K.
Опубліковано 2000