Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region von Borblik, V.L., Shwarts, Yu.M., Shwarts, M.M.

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A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base von Borblik, V.L., Shwarts, Yu.M., Shwarts, M.M.

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Revealing the hopping mechanism of conduction in heavily doped silicon diodes von Borblik, V. L., Shwarts, Yu. M., Shwarts, M. M.

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Peculiarities of injection phenomena in heavily doped silicon structures and development of radiation-resistant diode temperature sensors von Shwarts, Yu.M., Sokolov, V.N., Shwarts, M.M., Venger, E.F.

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Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures von Shwarts, Yu.M., Kondrachuk, A.V., Shwarts, M.M., Shpinar, L.I.

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Optimized calibration of cryogenic silicon thermodiodes von Ivashchenko, O.M., Shwarts, Yu.M., Shwarts, M.M., Kopko, D.P., Sypko, M.I.

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Effect of magnetic field on hysteretic characteristics of silicon diodes under conditions of low-temperature impurity breakdown von Aleinikov, A.B., Berezovets, V.A., Borblik, V.L., Shwarts, M.M., Shwarts, Yu.M.

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Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties von Borblik, V.L., Korchevoi, A.A., Nikolenko, A.S., Strelchuk, V.V., Fonkich, A.M., Shwarts, Yu.M., Shwarts, M.M.

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