Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region

за авторством Borblik, V.L., Shwarts, Yu.M., Shwarts, M.M.
Опубліковано 2007

A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base

за авторством Borblik, V.L., Shwarts, Yu.M., Shwarts, M.M.
Опубліковано 2009

Revealing the hopping mechanism of conduction in heavily doped silicon diodes

за авторством Borblik, V. L., Shwarts, Yu. M., Shwarts, M. M.
Опубліковано 2005

Negative magnetoresistance of heavily doped silicon p-n junction

за авторством Borblik, V.L., Rudnev, I.A., Shwarts, Yu.M., Shwarts, M.M.
Опубліковано 2011

Peculiarities of injection phenomena in heavily doped silicon structures and development of radiation-resistant diode temperature sensors

за авторством Shwarts, Yu.M., Sokolov, V.N., Shwarts, M.M., Venger, E.F.
Опубліковано 2003

Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures

за авторством Shwarts, Yu.M., Kondrachuk, A.V., Shwarts, M.M., Shpinar, L.I.
Опубліковано 2000

Optimized calibration of cryogenic silicon thermodiodes

за авторством Ivashchenko, O.M., Shwarts, Yu.M., Shwarts, M.M., Kopko, D.P., Sypko, M.I.
Опубліковано 2011

Smoothing cubic spline approximation of silicon diode temperature sensors thermometric characteristics

за авторством Ivashchenko, O.M., Shwarts, Yu.M., Shwarts, M.M., Kopko, D.P., Sypko, N.I.
Опубліковано 2010

Effect of magnetic field on hysteretic characteristics of silicon diodes under conditions of low-temperature impurity breakdown

за авторством Aleinikov, A.B., Berezovets, V.A., Borblik, V.L., Shwarts, M.M., Shwarts, Yu.M.
Опубліковано 2012

Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties

за авторством Borblik, V.L., Korchevoi, A.A., Nikolenko, A.S., Strelchuk, V.V., Fonkich, A.M., Shwarts, Yu.M., Shwarts, M.M.
Опубліковано 2014