Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region
Heavily doped silicon diodes of n⁺⁺-p⁺ type which exhibit the Mott
 temperature dependence of the forward current in a certain range of bias voltages and
 low temperatures have studied from the point of their use as temperature sensors. In the
 region of hopping conduction, t...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2007 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118120 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region / V.L. Borblik, Yu.M. Shwarts, M.M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 44-47. — Бібліогр.: 11 назв. — англ. |