Effect of nonuniform doping profile on thermometric performance of diode temperature sensors за авторством Sokolov, V.N., Shwarts, Yu.M.

Отримати повний текст

About manifestation of the piezojunction effect in diode temperature sensors за авторством Borblik, V.L., Shwarts, Yu.M., Venger, E.F.

Отримати повний текст

Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region за авторством Borblik, V.L., Shwarts, Yu.M., Shwarts, M.M.

Отримати повний текст

A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base за авторством Borblik, V.L., Shwarts, Yu.M., Shwarts, M.M.

Отримати повний текст

Revealing the hopping mechanism of conduction in heavily doped silicon diodes за авторством Borblik, V. L., Shwarts, Yu. M., Shwarts, M. M.

Отримати повний текст

Effect of mechanical stress on operation of diode temperature sensors за авторством Borblik, V.L., Shwarts, Yu.M., Venger, E.F.

Отримати повний текст

Negative magnetoresistance of heavily doped silicon p-n junction за авторством Borblik, V.L., Rudnev, I.A., Shwarts, Yu.M., Shwarts, M.M.

Отримати повний текст

Peculiarities of injection phenomena in heavily doped silicon structures and development of radiation-resistant diode temperature sensors за авторством Shwarts, Yu.M., Sokolov, V.N., Shwarts, M.M., Venger, E.F.

Отримати повний текст

Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures за авторством Shwarts, Yu.M., Kondrachuk, A.V., Shwarts, M.M., Shpinar, L.I.

Отримати повний текст

New evidence of the hopping nature of the excess tunnel current in heavily doped silicon - diodes at cryogenic temperatures за авторством Borblik, V. L., Shwarts, Yu. M., Shwarts, M. M., Aleinikov, A. B.

Отримати повний текст

Optimized calibration of cryogenic silicon thermodiodes за авторством Ivashchenko, O.M., Shwarts, Yu.M., Shwarts, M.M., Kopko, D.P., Sypko, M.I.

Отримати повний текст

Effect of magnetic field on hysteretic characteristics of silicon diodes under conditions of low-temperature impurity breakdown за авторством Aleinikov, A.B., Berezovets, V.A., Borblik, V.L., Shwarts, M.M., Shwarts, Yu.M.

Отримати повний текст

Smoothing cubic spline approximation of silicon diode temperature sensors thermometric characteristics за авторством Ivashchenko, O.M., Shwarts, Yu.M., Shwarts, M.M., Kopko, D.P., Sypko, N.I.

Отримати повний текст

Self-consistent method for optimization of parameters of diode temperature sensors за авторством Kulish, N.R., Shwarts, Yu.M., Borblik, V.L., Venger, Ye.F., Sokolov, V.N.

Отримати повний текст

Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties за авторством Borblik, V.L., Korchevoi, A.A., Nikolenko, A.S., Strelchuk, V.V., Fonkich, A.M., Shwarts, Yu.M., Shwarts, M.M.

Отримати повний текст

Исследование термометрических характеристик GaP-диодов p+–n-типа за авторством Krasnov, V. A., Shwarts, Yu. M., Shwarts, М. M., Kopko, D. P., Erohin, S. Yu., Fonkich, A. М., Shutov, S. V., Sypko, N. I.

Отримати повний текст