Charge state of the activator in Ti:sapphire crystals grown by HDC method von Sidelnikova, N.S., Nizhankovskyi, S.V., Baranov, V.V.

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Influence of crystal growth conditions and carbothermal treatment on activator charge state in Ti:sapphire von Nizhankovskiy, S.V., Sidelnikova, N.S., Baranov, V.V.

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Optimization of temperature conditions for the growth of large-size sapphire crystals by the method of horizontally directed crystallization von Grin, L.A., Budnikov, A.T., Sidelnikova, N.S., Adonkin, G.T., Baranov, V.V.

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Optical properties and fine faulty structure of sapphire crystals grown in low pressure CO gas atmosphere von Puzikov, V.M., Danko, A.Ya., Adonkin, G.T., Sidelnikova, N.S., Tkachenko, V.F., Budnikov, A.T.

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Thermochemical etching of sapphire in CO+H₂ gas atmosphere von Kaltaev, Kh.Sh.-ogly, Sidelnikova, N.S., Dan`ko, A.Ya., Budnikov, A.T., Nizhankovsky, S.V.

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Growth and optical properties of Al₂O₃-delta:Nₓcrystals von Kaltaev, Kh.Sh.-ogly, Sidelnikova, N.S., Nizhankovsky, S.V., Dan`ko, A.Ya., Budnikov, A.T.

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Peculiarities of optical and structure characteristics of sapphire single crystals grown in Ar + CO atmosphere von Dan’ko, A.Ya., Tkachenko, V.F., Sidelnikova, N.S., Puzikov, V.M., Nizhankovskiy, S.V.

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Peculiarities of optical and structure characteristics of sapphire single crystals grown in Ar+CO atmosphere von Dan‘ko, A.Ya., Tkachenko, V.F., Sidelnikova, N.S., Puzikov, V.M., Nizhankovskiy, S.V.

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Phase transformations of alpha-Al₂O₃ during annealing in a reducing atmosphere von Dan`ko, A.Ya., Rom, M.A., Sidelnikova, N.S., Nizhankovsky, S.V., Grin`, L.A.

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Formation of the spinel structure (AIAI₂О₄) phase on sapphire surface von Sidelnikova, N.S., Rom, M.A., Dan‘ko, A.Ya., Nizhankovsky, S.V., Sirik, U.V., Krivonogov, S.I.

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Phase transformations at reduction of corundum von Dan`ko, A.Ya., Rom, M.A., Sidelnikova, N.S., Kaltaev, Kh.Sh., Nizhankovsky, S.V., Fedorov, A.I.

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Study of nature of some defects visible in polarized light in sapphire signle crystals von Tkachenko, V.F., Dan`ko, A.Ya., Puzikov, V.M., Budnikov, A.T., Lukienko, O.A., Sidelnikova, N.S., Adonkin, G.T.

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Growing of sapphire for optics and optoelectronics by the HDC method in a protective atmosphere von Dan`ko, A.Ya., Nizhankovsky, S.V., Kanischev, V.N., Sidelnikova, N.S., Adonkin, G.T., Puzikov, V.M., Grin, L.A.

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Growth conditions influence on thermally stimulated luminescence of sapphire single crystals von Blonskyy, I.V., Vakhnin, A.Yu., Danko, A.Ya., Kadashchuk, A.K., Kadan, V.N., Sidelnikova, N.S., Puzikov, V.M., Skryshevskii, Yu.A.

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Mechanism of AlN film formation at thermochemical nitridization of sapphire von Kaltaev, Kh.Sh.-ogly, Nizhankovskiy, S.V., Sidelnikova, N.S., Rom, M.A., Dan'ko, A.Ya., Dobrotvorskaya, M.V., Belyaev, A.Ye., Strelchuk, V.V., Kolomys, A.F.

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