Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing by Agueev, O.A., Svetlichny, A.M., Soloviev, S.I.

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Effect of pulse thermal treatments on the Ni(Ti)–n-21R(6H)-SiC contact parameters by Avdeev, S.P., Agueev, O.A., Konakova, R.V., Kudryk, Ya.Ya., Lytvyn, O.S., Lytvyn, P.M., Milenin, V.V., Sechenov, D.A., Svetlichny, A.M., Soloviev, S.I., Sudarshan, T.S.

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SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers by Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Lytvyn, O.S., Lytvyn, P.M., Vlaskina, S.I., Agueev, O.A., Svetlichny, A.I., Soloviev, S.I., Sudarshan, T.S.

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