Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing von Agueev, O.A., Svetlichny, A.M., Soloviev, S.I.

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From single SQUID to superconducting quantum arrays von Kornev, V.K., Kolotinskiy, N.V., Sharafiev, A.V., Soloviev, I.I.

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Effect of pulse thermal treatments on the Ni(Ti)–n-21R(6H)-SiC contact parameters von Avdeev, S.P., Agueev, O.A., Konakova, R.V., Kudryk, Ya.Ya., Lytvyn, O.S., Lytvyn, P.M., Milenin, V.V., Sechenov, D.A., Svetlichny, A.M., Soloviev, S.I., Sudarshan, T.S.

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SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers von Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Lytvyn, O.S., Lytvyn, P.M., Vlaskina, S.I., Agueev, O.A., Svetlichny, A.I., Soloviev, S.I., Sudarshan, T.S.

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