Харвестер відкритої науки НАН України

Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing

von Agueev, O.A., Svetlichny, A.M., Soloviev, S.I.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2000)

From single SQUID to superconducting quantum arrays

von Kornev, V.K., Kolotinskiy, N.V., Sharafiev, A.V., Soloviev, I.I.
Veröffentlicht in Физика низких температур (2017)

Effect of pulse thermal treatments on the Ni(Ti)–n-21R(6H)-SiC contact parameters

von Avdeev, S.P., Agueev, O.A., Konakova, R.V., Kudryk, Ya.Ya., Lytvyn, O.S., Lytvyn, P.M., Milenin, V.V., Sechenov, D.A., Svetlichny, A.M., Soloviev, S.I., Sudarshan, T.S.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2004)

SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers

von Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Lytvyn, O.S., Lytvyn, P.M., Vlaskina, S.I., Agueev, O.A., Svetlichny, A.I., Soloviev, S.I., Sudarshan, T.S.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2004)