Харвестер відкритої науки НАН України

Some peculiarities of the mechanism of irreversible photostructural transformations in thin As-S-Se layers

von Stronski, A.V.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2001)

Optical properties of Ge-As-S thin films

von Tolmachov, I.D., Stronski, A.V.
Veröffentlicht in Functional Materials (2009)

Photoinduced structural changes in As₁₀₀₋xSx layers

von Stronski, A., Vlcek, M., Sklenar, A.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2000)

Optical properties and structure of As-Ge-Se thin films

von Tolmachov, I.D., Stronski, A.V., Vlcek, M.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2010)

Fourier Raman spectroscopy studies of the As₄₀S₆₀-xSex glasses

von Stronski, A.V., Vlček, M., Oleksenko, P.F.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2001)

Polyassociative thermodynamical model of A²B⁶ semiconductor melt and phase equilibrium in Cd-Hg-Te system: 3. Optimization of the thermodynamical functions of the model and quasi-b...

von Moskvin, P.P., Rashkovetskiy, L.V., Stronski, A.V.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2005)

Study of surface influence on the n-Ge(110) electroreflectance spectra and their polarization spectroscopy

von Vlasenko, O.I., Gentsar, P.O., Stronski, A.V.
Veröffentlicht in Functional Materials (2009)

Вплив імпульсного лазерного опромінення (довжина електромагнітної хвилі 266 нм) на оптичні властивості CdTe та Cd0,9Zn0,1Te в області фундаментального оптичного переходу E0...

von Gentsar, P.O., Levytskyi, S.M., Stronski, A.V.
Veröffentlicht 2021

Investigation of nanophase separation in IR optical glasses As₄₀Se₆₀ using resonant Raman scattering

von Mateleshko, N., Mitsa, V., Veres, M., Koos, M., Stronski, A.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2004)

Raman scattering in sulphide glasses

von Tolmachov, I.D., Stronski, A.V., Pribylova, H., Vlček, M.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2010)

Nano-sized phase inclusions in As₂S₃ glass, films and fibers based on this glass

von Mateleshko, N., Mitsa, V., Stronski, A., Veres, M., Koos, M., Andriesh, A.M.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2004)

Raman spectra of Ag- and Cu- photodoped chalcogenide films

von Stronski, A.V., Vlcek, M., Stetsun, A.I., Sklenar, A., Shepeliavyi, P.E.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (1999)

Image formation properties of As₄₀S₂₀Se₄₀ thin layers in application for gratings fabrication

von Stronski, A.V., Vlcek, M., Shepeliavyi, P.E., Sklenar, A., Kostyukevich, S.A.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (1999)

Photoluminescence of As₂S₃ doped with Cr and Yb

von Stronski, A.V., Paiuk, O.P., Strelchuk, V.V., Nasieka, Iu.M., Vlček, M.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2014)

Optical properties of quantum-sized structures and two-dimensional photon crystals fabricated in semiconductor substrates using irreversible giant modification

von Kamuz, A.M., Oleksenko, P.F., Kamuz, O.A., Ilin, O.A., Stronski, A.V.
Veröffentlicht in Functional Materials (2008)

Optical properties of AlN/n-Si(111) films obtained by method of HF reactive magnetron sputtering

von Zayats, M.S., Boiko, V.G., Gentsar, P.O., Vuichyk, M.V., Lytvyn, O.S., Stronski, A.V.
Veröffentlicht in Functional Materials (2010)

Mid-IR impurity absorption in As₂S₃ chalcogenide glasses doped with transition metals

von Paiuk, A.P., Stronski, A.V., Vuichyk, N.V., Gubanova, A.A., Krys’kov, Ts.A., Oleksenko, P.F.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2012)

Structural properties of chalcogenide glasses As₂Se₃ doped with manganese

von Paiuk, O.P., Revutska, L.O., Stronski, A.V., Gudymenko, A.Yo., Stanchu, H.V., Gubanova, A.A., Kryskov, Ts.A.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2016)

Study of non-reversible photostructural transformations in As₄₀S₆₀-xSex layers applied for fabrication of holographic protective elements

von Stronski, A.V., Vlcek, M., Kostyukevych, S.A., Tomchuk, V.M., Kostyukevych, E.V., Svechnikov, S.V., Kudryavtsev, A.A., Moskalenko, N.L., Koptyukh, A.A.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2002)